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SimuLase(TM)半导体建模软件

SimuLase(TM)半导体建模软件

产品简介:SimuLase™ is the first software tool that allows a broad audience to take full advantage of the latest in semiconductor modelling. It's underlying fully microscopic many-body models allow to determine/predict the essential electro-optical properties like gain/absorption, refractive indicies, spontaneous emission (photo luminescence) or carrier losses due to radiative and Auger losses, with unprecedented accuracy while removing fit-parameters that used to require time and cost-intensive experimental investigations
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        SimuLase(TM)半导体建模软件:

          SimuLase™ is the first software tool that allows a broad audience to take full advantage of the latest in semiconductor modelling. It's underlying fully microscopic many-body models allow to determine/predict the essential electro-optical properties like gain/absorption, refractive indicies, spontaneous emission (photo luminescence) or carrier losses due to radiative and Auger losses, with unprecedented accuracy while removing fit-parameters that used to require time and cost-intensive experimental investigation.

            SimuLase™是第一款半导体模拟软件,用户通过它可以充分利用最新的半导体模型。通过软件的全微观多体模型,可用来精确验证/预测某些结构参数的关键光电特性,如增益/吸收,折射率,自发辐射(光致发光)或由辐射和俄歇损耗造成的载流子损耗等,从而节省时间和昂贵的实验研究成本。

        Tools based on the microscopically calculated properties also allow to calculate macroscopic properties like transverse and longitudinal optical modes, reflectivity and transmission spectra, surface-PL spectra that take into account cavity effects that modify the pure material PL, threshold currents or operating characteristics for V(E)CSEL structures. SimuLase also allows for easy comparisons between experimental and theoretical results. The ground breaking quality of the underlying mircoscopic many-body models has been demonstrated in dozens of articles in peer-reviewed journals (see our publications section).

          用于微观特性计算的工具也可以计算V(E)CSEL结构的一些宏观特性,例如横模和纵模模式,反射和透射光谱,考虑空腔效应的表面-PL光谱,阈值电流或工作特性等。通过Simulase模拟可以将实验结果与理论值进行对比。利用微观多体模型开展的创新研究已在很多论文中得到证明。(详见后续的论文摘录)。

        You can download a real-life deion of how SimuLase can be used to design, analyze and optimize e.g. edge-emitting devices and VECSELS here.

          SimuLase也提供了有关设计、分析和优化的演示视频供下载。

        SimuLase™ provides: SimuLase™提供:

           the correct fundamental input that is the required starting point for any reliable device modeling. The data can be easily imported in other commercial software tools for further investigations.软件给出了对任一可信器件建模时的准确初始基本输入。该数据也可导入到其他商业软件工具中,作进一步研究。

        an easy to use GUI-interface that allows to determine many basic characteristics of structures without any experimental feedback.软件给出了易操作的GUI界面,可以确定很多结构的基本特性,而不需要任何实验反馈。

        experimentally veryfied models that have lead to more than fifty publications in peer-reviewed journals over the last two decades.软件给出了很多经过实验验证的模型,在过去的二十年间,已经有五十多篇发表的论文对这些模型进行了研究。

          And, you don't have to be an expert in microscopic manybody physics to take full advantage of this tool. SimuLase™ can preset all parameters besides the structural design automatically - taking full advantage of the fit-parameter free nature of the microscopic models. For quick shots or research interests, SimuLase allows to influence the calculation parameters or use simplified models.而且,即使您不是微观多体物理学方面的专家,也可以充分利用本软件。SimuLase可以利用微观多体模型的参数匹配,自动的进行结构设计和预设置所有参数。同时为了快速浏览或找出研究兴趣点,软件也允许更改计算参数或使用简化模型。

        SimuLase_Designer™ is an easy to use GUI for:本软件所采用的GUI界面方式,可以:

        designing heterostructures by simply adding/ deleting/ changing layers of various widths and material compositions.用于设计异质结构,只需简单的添加/删除/改变每层的宽度和组分。

        instantly displaying the heterostructure energy levels, confinement potential, subband levels and wavefunctions.即时显示异质结结构的能带、势能、子带和波函数。

           calculating and displaying the background refractive index profile, transverse (confined) and longitudinal (propagating) modes and optical confinement factors.计算和显示背景折射率剖面、横模和纵模以及光学约束因子

           calculating and displaying the reflection and transmission spectra of a structure,计算和显示结构的反射和透射谱。

           calculating electrical fields due to doped layers and applied voltages,计算施压掺杂层的电场分布。